3. Diagnostics of nanostructures
Purpose:Development of theoretic and experimental basis of aparatus realisation of X-ray ultrasonic integral dynamic diffractometry method for obtaining information about many types of defects in semiconductor crystal nanosystem simultaneously.
Expected results:Issue of new types of products: methods, theories
Stage 1:Development of theoretic model for X-ray ultrasonic integral dynamic diffractometry in Laue geometry in case of anomalous huge distribution of diffuse component that provides quantitive character of multiparametric diagnostic.
Stage 2:Development of experimental basis of X-ray ultrasonic integral dynamic diffractometry taking into account the influence of diffuse component in Laue geometry and practical realisation of this method in ISP and IMP NAS of Ukraine
Stage 3:Development of theoretic model for X-ray ultrasonic integral dynamic diffractometry in Laue geometry in case of anomalous transfering of Bragg and diffuse X-ray waves
Stage 4:Development of experimental basis of X-ray ultrasonic integral dynamic diffractometry taking into account the influence of diffuse component in Laue geometry for bulk crystal and practical realisation of this method in ISP and IMP NAS of Ukraine
Stage 5:Creation of laboratory for X-ray ultrasonic integral dynamic diffractometry for technical operations, which consist in determining the characteristics of nanomaterials structures or devices based on them