Publications on the project |
034 Atomically resolved STM imaging with a diamond tip: simulation and experiment |
Authors: | V Grushko, O Lübben, A N Chaika, N Novikov, E Mitskevich, A Chepugov, O Lysenko, B E Murphy, S A Krasnikov and I V Shvets | |
Summary: | | |
Keywords: | STM, diamond, atomic resolution, electron orbital, graphite | |
Edition: | Nanotechnology, Vol. 25, No.2, pp. 025706-025717. | | | 2014,
,English |
034 Scanning Probe Microscopy with Diamond Tip in Tribo-nanolithography |
Authors: | O. Lysenko, V. Grushko, E. Mitskevich and A. Mamalis | |
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Edition: | Mater. Res. Soc. Symp. Proc. Vol. 1318 2011, pp. 179—183. | | | 2011,
,English |
034 Combined nanopatterning and characterization of silicon surface using scanning tunelling microscopy with conductive diamond tip |
Authors: | Lysenko O. G., Dub S.N, Grushko V.I., Mitskevych E.I., Mamalis A.G. | |
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Edition: | Proceedings of the IEEE Conference on Nanotechnology 2012, pp. 1—4 | | | 2012,
,English |
034 Multifunctional scanning probe microscope with a diamond tip. Nanotechnology research at atmospheric conditions |
Authors: | Lysenko O. G. | |
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Edition: | Science and Innovation, 2012, V.8, N. 2, pp. 8-12 | | | 2012,
,Ukrainian |
034 Diamond probe nanotechnology for long-term storage media |
Authors: | Lysenko O. G., Novikov N. V., Grushko V.I., Ivakhnenko S.A. | |
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Edition: | Proceedings of the International Conference "Ukraine-Russia-Skolkovo: One innovation space" Kiev, May 22-23, 2013 | | | 2013,
,Russian |
034 Assessment of the resolution of scanning tunneling microscope with a tip of a boron-doped diamond. |
Authors: | Lysenko O. G., Grushko V. I., Tkach V. N., and Mitskevich E. I. | |
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Edition: | Journal of Superhard Materials №2, 2013 | | | ,
, |
034 Boron-doped diamond single crystals for probes of the high-vacuum tunneling microscopy |
Authors: | Chepugov A. P., Chaika A. N., Grushko V. I., Mitskevich E. I., and Lysenko O. G. | |
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Edition: | Journal of Superhard Materials №3, 2013 | | | ,
, |
034 Study of phase transformations in silicon by scanning tunneling spectroscopy and nanoindentation |
Authors: | Lysenko O. G., Dub S. N., Grushko V. I., Mitskevich E. I., and Tolmacheva G. N. | |
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Edition: | Journal of Superhard Materials №6, 2013 | | | ,
, |
034 Theoretical study of the behavior of the tunneling current in a scanning probe microscope with a diamond tip. |
Authors: | V. Grushko, N. Novikov, O. Lysenko, A. Shcherbakov, E. Mitskevich | |
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Edition: | Nanosystems, nanomaterials and nanotechnologies, v. 9, 4, 2011 | | | 2011,
,Russian |
034 The new STM/STS technique to study the atomic structure of the surface |
Authors: | V. Grushko, N. Novikov, A. Chaika, E. Mitskevich, O. Lysenko, | |
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Edition: | Nanosystems, nanomaterials and nanotechnologies, 2014, v. 12, 1. . | | | 2014,
,Russian |
The events in the framework of the project |
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034 Lysenko Oleg G.Candidates of sciences (PhD, engineering sciences) Senior Research Fellow +380444676615
034 2. Technology Semiconductor Nanostructures Purpose:Create new nanotechnology and facilities for making nanoelectronics elements and super-dense media digital data by contact action of diamond probe of scanning probe microscope with in-situ control of the obtained nanostructures Expected results:Release of new product: technology Stage 1:Theoretical studies of semiconductor diamond nano probe nanointeraction with a solid surface Stage 2:Development of nano probes with a diamond tip for combined techniques of scanning probe microscopy Stage 3:Upgrading of combined scanning probe microscope with conductive diamond probe, development of specific software that allows scanning the sample with a resolution above 1 nm, nanokontakt effect on the surface with the parameters control of tip and sample interaction and the ability to surface tunneling spectroscopy Stage 4:The study of phase transitions in silicon during nanoindentation and nanoscratching. Development of driven changes techniques in local characteristics of silicon on nanoscale level by contact action of diamond nano probe. Determination of durability and optimal geometric characteristics of the diamond tip at silicon nanoprocessing, limit values of load and speed of the process Stage 5:Production of nanoelectronics elements and superdense digital media prototypes, the study of their properties, optimization of process parameters of silicon nanoprocessing by diamond tip. Production of technical documentation, patenting, preparing the final report
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